Method for forming a shallow surface relief pattern in a poly(ol

Details Method for forming a shallow surface relief pattern in a poly(ol Method for forming a shallow surface relief pattern in a poly(ol

1976-07-30

1981-05-12

Newsome, John H.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

427 431, 430296, 430324, 430326, B05D 306

Patent

active

042672570

ABSTRACT:
This invention pertains to an electron beam resist method for forming a surface relief pattern in a poly(oelfin sulfone) layer wherein the polymer layer is useful for depositing a metal film thereon and thereby forming a corresponding surface relief pattern in the metal film. The surface relief pattern is formed using poly(3-methyl-1-cyclopentene sulfone) as the poly(olefin sulfone) layer and using a mixture of cycloheptanone and 2-methylcyclohexanol or a mixture of 2-methylcyclohexanone and 3-methylcyclohexanol as the developer for the poly(3-methyl-1-cyclopentene sulfone) layer.

REFERENCES:
patent: 3935331 (1976-01-01), Poliniak et al.
patent: 3935332 (1976-01-01), Poliniak et al.

Affiliated with

Also associated with

Rating

Method for forming a shallow surface relief pattern in a poly(ol does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a shallow surface relief pattern in a poly(ol, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a shallow surface relief pattern in a poly(ol will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2047180