Method for forming a semiconductor structure through...

Details Method for forming a semiconductor structure through... Method for forming a semiconductor structure through...

2005-07-12

2005-07-12

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S977000

Reexamination Certificate

active

06916728

ABSTRACT:
A method for creating a MEMS structure is provided. In accordance with the method, an article is provided which comprises a substrate (101) and a single crystal semiconductor layer (105), and having a sacrificial layer (103) comprising a first dielectric material which is disposed between the substrate and the semiconductor layer. An opening (107) is created which extends through the semiconductor layer (105) and the sacrificial layer (103) and which exposes a portion of the substrate (101). An anchor portion (109) comprising a second dielectric material is then formed in the opening (107). Next, the semiconductor layer (105) is epitaxially grown to a suitable device thickness, thereby forming a device layer (111).

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