Method for forming a semiconductor multilayer interconnect devic

Details Method for forming a semiconductor multilayer interconnect devic Method for forming a semiconductor multilayer interconnect devic

1996-11-18

2000-10-17

Niebling, John F.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438761, 438778, 438780, 438787, 438789, H01L 2131

Patent

active

061331635

ABSTRACT:
The method of forming a highly reliabile multilayer interconnect in a semiconductor device is discussed. After forming a metal interconnect 2 on a substrate 1, a polyimide precursor is coated using a spinner 3. A fully integral polyimide film is then formed by treatment such as baking at a prescribed temperature.

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