Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2006-04-04
2006-04-04
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S486000
Reexamination Certificate
active
07022590
ABSTRACT:
An insulating film103for making an under insulating layer104is formed on a quartz or semiconductor substrate100. Recesses105ato105dcorresponding to recesses101ato101dof the substrate100are formed on the surface of the insulating film103. The surface of this insulating film103is flattened to form the under insulating layer104. By this flattening process, the distance L1, L2, . . . , Ln between the recesses106a, 106b, 106dof the under insulating layer104is made 0.3 μm or more, and the depth of the respective recesses is made 10 nm or less. The root-mean-square surface roughness of the surface of the under insulating film104is made 0.3 nm or less. By this, in the recesses106a, 106b, 106d, it can be avoided to block crystal growth of the semiconductor thin film, and crystal grain boundaries can be substantially disappeared.
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Miyanaga Akiharu
Ohtani Hisashi
Pert Evan
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co. Ltd
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