Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-09-27
2005-09-27
Zarneke, David (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S592000, C438S583000, C438S275000, C438S218000, C438S519000
Reexamination Certificate
active
06949455
ABSTRACT:
A method for providing gates of transistors with at least two different work functions utilizes a silicidation of two different metals at different times, silicidation for one gate and polysilicon for the other, or silicidation using a single metal with two differently doped silicon structures. Thus the problem associated with performing silicidation of two different metals at the same time is avoided. If the two metals have significantly different silicidation temperatures, the one with the lower temperature silicidation will likely have significantly degraded performance as a result of having to also experience the higher temperature required to achieve silicidation with the other metal.
REFERENCES:
patent: 5236852 (1993-08-01), Cherniawski et al.
patent: 6204103 (2001-03-01), Bai et al.
patent: 6261978 (2001-07-01), Chen et al.
patent: 6265258 (2001-07-01), Liang et al.
patent: 6365450 (2002-04-01), Kim
patent: 2002/0137287 (2002-09-01), Takebuchi
Tavel et al., “Totally Silicided (CoSi2) Polysilicon: A Novel Approach to Very Low-Resistive Gate (-252/ ) Without Metal CMP Nor Etching,” IEEE, 2001, 4 pgs.
Geren James P.
Nguyen Bich-Yen
Pham Daniel Thanh-Khac
Reid Kimberly G.
Rossow Marc
Clingan, Jr. James L.
Freescale Semiconductor Inc.
King Robert L.
Yevsikov Victor V.
Zarneke David
LandOfFree
Method for forming a semiconductor device structure a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a semiconductor device structure a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a semiconductor device structure a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3373466