Method for forming a semiconductor device in which an anti refle

Details Method for forming a semiconductor device in which an anti refle Method for forming a semiconductor device in which an anti refle

1995-04-04

1997-10-07

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

15666111, 430316, 430950, H01L 213105

Patent

active

056743564

ABSTRACT:
A method for producing a semiconductor device in which dry etching properties are rendered compatible with satisfactory anti-reflection characteristics in far-infrared lithography. An anti-reflective layer 6 is made up of a lower anti-reflective layer 6.sub.L of SiO.sub.X having a relatively low Si ratio and an upper anti-reflective layer 6.sub.H of SiO.sub.X having a relatively high Si ratio. After forming a resist pattern 7, the upper anti-reflective layer 6.sub.H and the lower anti-reflective layer 6.sub.U are etched using the etching conditions for Si and those for SiO.sub.X, respectively. Such variation in the Si ratio along the film thickness is realized by controlling the CVD film-forming conditions or Si.sup.+ ion implantation. Since the upper anti-reflective layer 6.sub.H has a refractive index higher than that of the lower anti-reflective layer 6.sub.L of SiO.sub.X, the standing wave suppression effect is improved. Since the films 6.sub.U, 6.sub.L are etched under respective optimum conditions, shape anisotropy may be realized. Film formation is not difficult to achieve because the elementary composition of the anti-reflective layer 6 on the whole is uniform.

REFERENCES:
patent: 4070689 (1978-01-01), Coleman et al.
patent: 4145457 (1979-03-01), Kersten
patent: 4541892 (1985-09-01), Jeuch
patent: 4592129 (1986-06-01), Legge
patent: 4680742 (1987-07-01), Yamada et al.
patent: 4793897 (1988-12-01), Dunfield et al.
patent: 4837044 (1989-06-01), Murarka et al.
patent: 4978420 (1990-12-01), Bach
patent: 5076674 (1991-12-01), Lynam
patent: 5286608 (1994-02-01), Koh
patent: 5378659 (1995-01-01), Roman et al.
patent: 5580701 (1996-12-01), Lur et al.

Affiliated with

Also associated with

Rating

Method for forming a semiconductor device in which an anti refle does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a semiconductor device in which an anti refle, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a semiconductor device in which an anti refle will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2353796