Method for forming a semiconductor device having reduced stepped

Details Method for forming a semiconductor device having reduced stepped Method for forming a semiconductor device having reduced stepped

1997-06-05

1998-07-07

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438253, 438622, H01L 2144

Patent

active

057768250

ABSTRACT:
A first conductive layer and a second conductive layer are formed apart from each other on a surface of a semiconductor substrate. A first contact hole for exposing a surface of first conductive layer is formed in an interlayer insulating film. A first interconnection layer is buried in first contact hole so as to be in contact with first conductive layer. The position of the surface of first interconnection layer is the same as or lower than the surface of interlayer insulating film. The surface of first interconnection layer is covered with an insulating film. A second contact hole for exposing a surface of second conductive layer is provided in interlayer insulating film. A second conductive layer is connected to second conductive layer through second contact hole.

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patent: 5399518 (1995-03-01), Sim et al.
High-Density, Folded Dram Cell, IBM Technical Disclosure Bulletin, vol. 32, No. 9B, Feb. 1990, pp. 378-381.
Kitsukawa et al., "256-MbDRAM Circuit Technologies for File Applications," IEEE Journal of Solid-State Circuits, vol. 28, No. 11, Nov. 1993, pp. 1105-1111.

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