Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-06-26
2007-06-26
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S763000, C257SE21426
Reexamination Certificate
active
11380518
ABSTRACT:
A method for forming a semiconductor device includes placing a Si substrate and an Sc2O3powder source in an oxide chamber, and vaporizing the Sc2O3powder source in the oxide chamber so as to form a single crystal Sc2O3film on the Si substrate through electron beam evaporation techniques.
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M. Hong, et al, Single-crystal GaN/Gd2O3/GaN heterostructure, J. Vac. Sci. Technol. B 20(3), May/Jun. 2002, pp. 1274-1277.
Chang Shiang-Pi
Chen Chih-Ping
Hong Ming-Hwei
Kwo Jueinai
Lee Wei-Chin
Chaudhari Chandra
Darby & Darby
National Tsing Hua University
Yevsikov Victor V.
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