Semiconductor device manufacturing: process – Forming schottky junction – Using platinum group metal
Reexamination Certificate
2007-06-26
2007-06-26
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Forming schottky junction
Using platinum group metal
C438S656000, C438S682000
Reexamination Certificate
active
10854389
ABSTRACT:
A method for forming a semiconductor device includes providing a semiconductor substrate, forming an insulating layer over the semiconductor substrate, forming a conductive layer over the insulating layer, forming a first metal silicide layer over the conductive layer, patterning the conductive layer to form a patterned first layer, wherein the patterned first layer is a part of a control electrode, patterning the first metal silicide layer to form a patterned first metal silicide layer over the control electrode so that the patterned first metal silicide layer remains over the control electrode, and forming a second metal silicide over the patterned metal silicide layer, wherein the second metal silicide layer has a thickness greater than the thickness of first metal silicide layer.
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Jawarani Dharmesh
Stephens Tab A.
Dang Phuc T.
Freescale Semiconductor Inc.
Vo Kim-Marie
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