Method for forming a semiconductor device having a shallow junct

Details Method for forming a semiconductor device having a shallow junct Method for forming a semiconductor device having a shallow junct

1996-02-22

1997-10-14

Niebling, John

Fishing, trapping, and vermin destroying

20200, 20950, 20 46, H01L 21266

Patent

active

056772130

ABSTRACT:
In accordance with an aspect of the present invention, there is provided a method for forming a junction of a low sheet resistance on a silicon substrate, comprising the steps of forming an amorphous silicon layer on said silicon substrate; implanting impurity ions into said amorphous silicon layer; implanting transition metal ions into said amorphous silicon layer; and thermally treating said amorphous silicon layer and silicon substrate such that said transition metal ions diffuse to the surface of said silicon substrate and said impurity ions diffuse into said silicon substrate.

REFERENCES:
patent: 5227329 (1993-07-01), Kobayashi et al.
patent: 5393687 (1995-02-01), Liang
patent: 5439831 (1995-08-01), Schwalke et al.
patent: 5536676 (1996-07-01), Cheng et al.
patent: 5585295 (1996-12-01), Wu

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