Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Patent
1998-02-27
1999-04-06
Dutton, Brian
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
438933, 438938, H01L 21338
Patent
active
058917691
ABSTRACT:
A method for forming a relaxed semiconductor layer (12) includes forming a strained semiconductor layer on a substrate (11). The strained semiconductor layer has a different lattice constant than the substrate (11). Without exposing the strained semiconductor layer to an oxidizing ambient, the strained semiconductor layer is relaxed using thermal stress.
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Burt Curtis Lee
Hong Stella Q.
Liaw Hang Ming
Stein Clifford P.
Dutton Brian
Jackson Kevin B.
Motorola Inc.
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