Method for forming a semiconductor device

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156656, 156657, 1566611, 156662, 156653, 156904, 437 52, 437228, 437233, H01L 21306, B44C 122, C03C 1500, C23F 100

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052405583

ABSTRACT:
The surface area of a polysilicon electrode is increased by sputtering non-coalescing islands (20) of aluminum onto a silicon dioxide layer (18), which is overlying the polysilicon electrode. The sputtering process allows uniform island formation to be achieved independent of the deposition surface. The non-coalescing islands are then used as a mask, and a portion of the buffer layer (22) and a portion of the polysilicon electrode (26) are etched to form pillar-like regions (30) within the polysilicon electrode.

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