Method for forming a semiconductor buried contact with a removab

Details Method for forming a semiconductor buried contact with a removab Method for forming a semiconductor buried contact with a removab

1997-07-01

2000-01-04

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438701, 438396, 438947, 438672, 148DIG20, H01L 213205, H01L 214763

Patent

active

06010953&

ABSTRACT:
A removable oxide spacer is used to reduce the size of a contact opening in a memory cell between polysilicon word lines below a lithographic minimum. The removable spacer is deposited before the buried contact patterning and etching. Since word lines diverge at a cell location, the removable spacer retains a lesser thickness over the divergent area contact opening and a greater thickness elsewhere between word lines due to the more narrow gap therebetween and the spacer being deposited such that it fills the gap. The removable spacer reduces the buried contact size since the actual self-aligned contact area is defined by the spacer sidewall. The removable spacer is formed of materials having higher etching selectivity relative to materials forming underlying structures. Etching of the spacer creates a buried contact opening smaller than a lithographic minimum because silicon oxide surrounding the buried contact area is protected by the removable spacer. The removable spacer is removed after the resist strip, leaving a sublithographic buried contact opening.

REFERENCES:
patent: 5051380 (1991-09-01), Maeda et al.
patent: 5223448 (1993-06-01), Su
patent: 5422315 (1995-06-01), Kobayashi
patent: 5605864 (1997-02-01), Prall
patent: 5728596 (1998-03-01), Prall

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