Method for forming a self-aligned nitrogen-containing copper...

Details Method for forming a self-aligned nitrogen-containing copper... Method for forming a self-aligned nitrogen-containing copper...

2007-09-12

2008-08-19

Smith, Matthew S. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S635000, C438S658000, C257SE21582, C257SE21592

Reexamination Certificate

active

07413985

ABSTRACT:
By forming a copper/silicon
itrogen alloy in a surface portion of a copper-containing region on the basis of a precursor layer, highly controllable and reliable process conditions may be established. The precursor layer may be formed on the basis of a liquid precursor solution, which may exhibit a substantially self-aligned and self-limiting deposition behavior.

REFERENCES:
patent: 6350687 (2002-02-01), Avanzino et al.
patent: 6806191 (2004-10-01), Zistl et al.
patent: 2005/0095843 (2005-05-01), West et al.
patent: 2005/0147762 (2005-07-01), Dubin et al.
patent: 1 465 245 (2004-10-01), None
patent: 1 670 047 (2006-06-01), None
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2006 056 624.6-33 dated May 23, 2007.

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