Method for forming a self-aligned contact with a silicide or...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S622000, C438S637000, C438S299000, C438S672000, C438S675000

Reexamination Certificate

active

06884715

ABSTRACT:
A method of forming a device including a conductor and a contact over a semiconductor substrate starts by depositing first dielectric and first hard mask layers on the substrate. Form a conductor slot through the hard mask and down into or through the first dielectric layer. Form a recessed conductor in the slot. Widen the slot in the hard mask to form a wide slot. Form a cap in the wide slot covering the conductor and overhanging exposed portions of the first dielectric layer. Deposit a second dielectric layer and a hard mask. Etch an initial contact hole through the second hard mask down to the top surface of the second dielectric layer. Etch a deep contact hole through the second dielectric layer, the first hard; mask and the first dielectric layer down to the substrate with an etchant selective to the capping layer. Fill the deep contact hole and the contact hole with contact metallization.

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patent: 6787460 (2004-09-01), Lee et al.

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