Method for forming a self-aligned contact

Details Method for forming a self-aligned contact Method for forming a self-aligned contact

1999-03-11

2000-07-04

Smith, Matthew

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438618, 438241, 438279, 438199, 438195, 438304, H01L 2170

Patent

active

060838280

ABSTRACT:
A method for forming a SAC opening is provided. As a self-aligned contact (SAC) opening is formed in a dielectric layer on a semiconductor substrate to expose one of source/drain regions in the substrate, a misalignment of the SAC opening may occur to expose a portion of the gate structure. The gate structure has a gate, which is covered by a cap layer on the top, a thin oxide layer on each sidewall of the gate and the cap layer, and a spacer on the thin oxide layer. The SAC opening causes a clearance between the spacer and the gate since a portion of the thin oxide layer is removed. The method contains forming an insulating layer over the substrate to fill the clearance. An etching back process is performed to remove the insulating layer so that a remaining portion of the insulating layer fills the clearance to fully isolate the gate.

REFERENCES:
patent: 5166096 (1992-11-01), Cote et al.
patent: 5599726 (1997-02-01), Pan
patent: 5668024 (1997-09-01), Tsai et al.
patent: 5766992 (1998-06-01), Chou et al.
patent: 5807779 (1998-09-01), Liaw
patent: 6001726 (1999-12-01), Nagabushnam et al.

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