Method for forming a self-aligned contact

Details Method for forming a self-aligned contact Method for forming a self-aligned contact

1998-08-19

1999-12-21

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438597, 438624, 438637, H01L 21283

Patent

active

060048700

ABSTRACT:
A method for forming a contact well for a semiconductor device (10) is disclosed. According to this method, a first insulator layer (24) comprising an insulating material is formed around a gate (20). A contact well filler (32) is then formed adjoining the first insulator layer (24). A second insulator layer (34) comprising the insulating material is formed around the first insulator layer (24) and the contact well filler (32). The contact well filler (32) is then removed to form the contact well (36) in the second insulator layer (34). This method allows the use a non-hazardous selective etchant to form the contact well. The semiconductor device (10) formed in accordance with the present invention also exhibits low parasitic gate capacitance, high switching speed and low power consumption.

REFERENCES:
patent: 4997790 (1991-03-01), Woo et al.
patent: 5158910 (1992-10-01), Cooper et al.
patent: 5270236 (1993-12-01), Rosner
patent: 5283208 (1994-02-01), Lorsung et al.
patent: 5710061 (1998-01-01), Cleeves

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