Method for forming a Schottky diode

Details Method for forming a Schottky diode Method for forming a Schottky diode

2011-07-05

2011-07-05

Tran, Thien F (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S169000, C438S534000, C438S570000, C257SE29317, C257SE21450

Reexamination Certificate

active

07972913

ABSTRACT:
Improved Schottky diodes with reduced leakage current and improved breakdown voltage are provided by building a JFET with its current path of a first conductivity type serially located between a first terminal comprising a Schottky contact and a second terminal. The current path lies (i) between multiple substantially parallel finger regions of a second, opposite, conductivity type substantially laterally outboard of the Schottky contact, and (ii) partly above a buried region of the second conductivity type that underlies a portion of the current path, which regions are electrically coupled to the first terminal and the Schottky contact and which portion is electrically coupled to the second terminal. When reverse bias is applied to the first terminal and Schottky contact the current path is substantially pinched off in vertical or horizontal directions or both, thereby reducing the leakage current and improving the breakdown voltage of the device.

REFERENCES:
patent: 5770886 (1998-06-01), Rao et al.
patent: 6404033 (2002-06-01), Chang et al.
patent: 6426541 (2002-07-01), Chang et al.
patent: 6583972 (2003-06-01), Verhaege et al.
patent: 7064407 (2006-06-01), Mallikarjunaswamy
patent: 7282386 (2007-10-01), Khemka et al.
patent: 7355260 (2008-04-01), Khemka et al.
patent: 2006/0151836 (2006-07-01), Salcedo et al.
patent: 2006/0151868 (2006-07-01), Zhu et al.
patent: 2007/0007545 (2007-01-01), Salcedo et al.
patent: 2008/0012044 (2008-01-01), Salcedo et al.
patent: 2010/0187577 (2010-07-01), Lin et al.

Affiliated with

Also associated with

Rating

Method for forming a Schottky diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a Schottky diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a Schottky diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2688010