Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2002-07-10
2004-11-16
Duda, Kathleen (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S313000, C430S327000
Reexamination Certificate
active
06818383
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method for forming a resist pattern and also to a method for manufacturing a semiconductor device using the formation method. More particularly, the invention relates to a method for forming a resist pattern wherein a chemically amplifying resist is patterned accurately on an underlying film containing a basic substance and also to a method for manufacturing a semiconductor device using the formation method.
2. Background Art
FIG.
10
and
FIG. 11
are, respectively, a sectional view showing a conventional method of manufacturing a semiconductor device using a chemically amplifying resist. Referring now to FIG.
10
(
a
), a film
103
to be processed, an antireflection film
105
and a positive type of chemically amplifying resist
107
are successively formed on a semiconductor substrate
101
. Next, with reference to FIG.
10
(
b
), the semiconductor substrate
101
is irradiated with an excimer laser beam
111
via a photomask
109
of a desired pattern for exposure of the chemically amplifying resist
107
thereto. Upon the exposure, proton acid H
+
is generated in the chemically amplifying resist
107
at an exposed portions
107
a
thereof which has been irradiated with the beam. This proton acid acts as a catalyst that causes a resist resin or the like to undergo a chemical change and convert it to a substance capable of being dissolved in a liquid developer.
Next, with reference to FIG.
10
(
c
), the exposed, chemically amplifying resist
107
is developed to permit exposed portions
107
a
to be dissolved and non-exposed portions
107
b
to be left, thereby forming a resist pattern
107
c
. Referring now to FIG.
11
(
a
), an antireflection film
105
is etched by using a mask of the resist pattern
107
c
to form an antireflection film pattern
105
b.
Thereafter, reference is made to FIG.
11
(
b
) wherein the film
103
to be processed is etched by using a mask of the resist pattern
107
c
and the antireflection film pattern
105
b
, thereby obtaining a desired pattern
103
a
of the film to be processed. Subsequently, the resist pattern is removed, followed by a given process to complete a desired semiconductor device.
In such prior art techniques as set forth above, however, when the antireflection film as an underlying film of the chemically amplifying resist, contains a basic substance which is liable to supply an electron, the solubility of the resist in a liquid developer lowers by a so-called acid deactivation phenomenon wherein the proton acid (H
+
) generated in the resist undergoes a neutralization reaction with the electron supplied from the antireflection film at the interface between the resist and the antireflection film as shown in FIG.
12
.
As a result, as shown in FIG.
10
(
c
), the resist pattern
107
c
takes a form of a trailed skirt at the lower portion thereof. When the film to be processed is etched by using a mask of such a resist pattern, the resultant film pattern may become thicker than that of a desired size, or may take such a step-shifted shape that its shoulder portion is slanted downwards, thus presenting the problem that the control of dimensional accuracy becomes difficult. It will be noted that the above-mentioned chemically amplifying resist has been assumed to be of the positive type (wherein an exposed portion is dissolved in a liquid developer) and that with a negative type (wherein a non-exposed portion is dissolved in a liquid developer), the resist pattern becomes thinner at the lower portion thereof, with the result that a similar problem has been experienced in that the resist pattern may be liable to fall down, or the pattern of the film to be processed may become finer.
SUMMARY OF THE INVENTION
The present invention has been made in order to solve such problems as discussed above and a first object of the invention is to provide a method for forming a resist pattern which ensures the formation of an accurate resist pattern even on an underlying film containing a basic substance.
A second object of the invention is to provide a method for manufacturing a semiconductor device using the above resist pattern-forming method.
According to one aspect of the present invention, in a method for forming a resist pattern, a surface of an underlying film containing a basic substance is treated by exposure to a plasma using a carbon-containing gas. A chemically amplifying resist is formed on the surface-treated underlying film. The chemically amplifying resist is subjected to exposure and development treatments thereby patterning said chemically amplifying resist.
According to another aspect of the present invention, in a method for forming a resist pattern, a surface of an underlying film containing a basic substance is treated by exposing to an ozone gas. A chemically amplifying resist film is formed on the thus surface-treated underlying film. The chemically amplifying resist is subjected to exposure and development treatments thereby patterning said chemically amplifying resist.
According to another aspect of the present invention, in a method for forming a resist pattern, a surface of an underlying film containing a basic substance is treated by exposing to an oxygen-containing high temperature gas. A chemically amplifying resist film is formed on the thus surface-treated underlying film. The chemically amplifying resist is subjected to exposure and development treatments thereby patterning said chemically amplifying resist.
According to another aspect of the present invention, in a method for forming a resist pattern, an underlying film containing a basic substance is formed on a substance. A chemically amplifying resist film is formed on the underlying film. The chemically amplifying resist is subjected exposure and development treatments thereby patterning the chemically amplifying resist. The exposure is performed in such a state that the substrate is applied with a potential by voltage application means thereby causing the underlying film to be polarized.
Other and further objects, features and advantages of the invention will appear more fully from the following description.
REFERENCES:
patent: 6287959 (2001-09-01), Lyons et al.
patent: 08-306605 (1996-11-01), None
patent: 08-339950 (1996-12-01), None
patent: 09-055351 (1997-02-01), None
patent: 09-080755 (1997-03-01), None
patent: 10-186672 (1998-07-01), None
patent: 11-186134 (1999-07-01), None
patent: 2001-9812 (2001-02-01), None
patent: 2001-63778 (2001-07-01), None
Duda Kathleen
Renesas Technology Corp.
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