Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-10-28
2000-08-01
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438655, 438660, 438663, 438683, H01L 214763, H01L 2144
Patent
active
060966386
ABSTRACT:
A method for forming a refractory metal silicide layer on a silicon surface in which a first layer of a refractory metal is formed on the silicon surface. A second layer extends over the first layer and is made of a nitrogen containing refractory metal. The silicon surface and the first and second layers are subjected to a heat treatment in an argon gas atmosphere to form a refractory metal silicide layer on an interface between the silicon surface and the first layer.
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Byun S.J., Kim R. C., Rha G. K., Kim J.J.,Kim S.W., TiN/TiSi2 Formation Using TiNx Layer and Its Feasibilities in ULSI, Japanese Journal of Applied Physics, Part 1, vol. 34, No. 2B, pp. 982-986, Feb. 1995.
NEC Corporation
Nguyen H. Tran
Niebling John F.
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