Method for forming a raised source and drain without using selec

Details Method for forming a raised source and drain without using selec Method for forming a raised source and drain without using selec

1999-11-15

2000-07-18

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438300, 438199, 438229, 438230, 438303, 438301, H01L 2122

Patent

active

06090691&

ABSTRACT:
A method for forming a raised source and drain structure without using selective epitaxial silicon growth. A semiconductor substrate is provided having one or more gate areas covered by dielectric structures. Doped polysilicon structures are adjacent to the dielectric structures on each side and are co-planar with the dielectric structures from a CMP process. The first dielectric structures are removed to form gate openings and a liner oxide layer is formed on the bottom and sidewalls of the gate openings. Dielectric spacers are formed on the liner oxide layer over the sidewalls of the gate openings, and the liner oxide layer is removed from the bottom of the gate openings and from over the doped polysilicon structures. Source and drain regions are formed in the semiconductor substrate by diffusing impurity ions from the doped polysilicon layer. A gate oxide layer and a gate polysilicon layer are formed over the semiconductor structure and the gate polysilicon layer is planarized to form a gate electrode. In a key step, the dielectric spacers are removed to form spacer openings, and impurity ions are implanted through the spacer openings and annealed to form source and drain extensions. The dielectric spacers are reformed and a self-aligned silicide layer is formed on the doped polysilicon structure and the gate electrode. Alternatively, the self-aligned silicide layer can be formed prior to removing the dielectric spacers and implanting ions to form source and drain extensions.

REFERENCES:
patent: 5082794 (1992-01-01), Pfiester et al.
patent: 5130272 (1992-07-01), Ferla et al.
patent: 5571738 (1996-11-01), Krivokapic
patent: 5750430 (1998-05-01), Son
patent: 5773358 (1998-06-01), Wu et al.
patent: 5827768 (1998-10-01), Lin et al.
patent: 5840604 (1998-11-01), Yoo et al.
patent: 5874341 (1999-02-01), Gardner et al.
patent: 5899719 (1999-05-01), Hong
patent: 5915183 (1999-06-01), Gambino et al.
patent: 5918134 (1999-06-01), Gardner et al.
patent: 5950081 (1999-09-01), Chang
patent: 6001695 (1999-12-01), Wu
patent: 6015746 (2000-01-01), Yeh et al.

Affiliated with

Also associated with

Rating

Method for forming a raised source and drain without using selec does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a raised source and drain without using selec, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a raised source and drain without using selec will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2036294