Method for forming a polysilicon/amorphous silicon composite gat

Details Method for forming a polysilicon/amorphous silicon composite gat Method for forming a polysilicon/amorphous silicon composite gat

1997-11-14

2000-01-25

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438592, 438660, 438952, H01L 213213, H01L 21324, H01L 21441

Patent

active

060178191

ABSTRACT:
A polysilicon/amorphous silicon composite layer for improved linewidth control in the patterning of gate electrodes, in the manufacture of metal oxide semiconductor (MOS) devices. The formation of a composite polysilicon/amorphous silicon gate in an integrated circuit gives the device the electrical performance and doping qualities of a polysilicon gate and also gives the device the smoothness of an amorphous silicon gate which improves line definition during gate patterning.

REFERENCES:
patent: 4411734 (1983-10-01), Maa
patent: 4737474 (1988-04-01), Price et al.
patent: 5089432 (1992-02-01), Yoo
patent: 5121186 (1992-06-01), Wong et al.
patent: 5147820 (1992-09-01), Chittipaddi et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5298436 (1994-03-01), Radosevrn et al.
patent: 5326722 (1994-07-01), Huang
patent: 5418398 (1995-05-01), Soardella et al.
patent: 5441904 (1995-08-01), Kim et al.
patent: 5514621 (1996-05-01), Tahara
patent: 5604157 (1997-02-01), Dai et al.
patent: 5614428 (1997-03-01), Kapoor
patent: 5652156 (1997-07-01), Liao et al.
patent: 5712181 (1998-01-01), Byun et al.

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