Method for forming a planarized layer of a semiconductor device

Details Method for forming a planarized layer of a semiconductor device Method for forming a planarized layer of a semiconductor device

2006-03-07

2006-03-07

Barreca, Nicole (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S313000, C430S317000, C430S319000, C430S328000, C430S330000

Reexamination Certificate

active

07008755

ABSTRACT:
In a method for forming a planarized layer on a semiconductor device having concave and convex structures, a dielectric film is formed on a semiconductor substrate; a photoresist pattern is formed to have a thickness on a portion of the dielectric film other than a convex portion greater than h
(h and n are real numbers of one or more) to remove the convex portion of the dielectric film by a depth of approximately h. The photoresist pattern is re-flowed to have a thickness below h
at a portion from an edge of the convex portion to a slant portion of the dielectric film. The dielectric film is etched using an etchant having a selectivity of 1:n between the photoresist pattern and the dielectric film. An edge of the photoresist pattern is made thin by re-flowing thereby minimizing a pillar, hence allowing simple, fast, planarization of the dielectric film.

REFERENCES:
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patent: 2003/0186170 (2003-10-01), Yamashita
patent: 10-284702 (1998-10-01), None
patent: 1997-0052834 (1997-07-01), None
patent: 2001-0086625 (2001-09-01), None
patent: 2002-0011814 (2002-02-01), None

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