Method for forming a planarized dielectric layer

Details Method for forming a planarized dielectric layer Method for forming a planarized dielectric layer

1997-12-29

1999-05-04

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

438758, 438623, 438624, 257759, 257760, H01L 2144

Patent

active

058997512

ABSTRACT:
A method for forming a planarized dielectric layer comprising the steps of first dissolving hydrogen silsesquoxane (HSQ) in a solvent to form a solution, then spreading the solution over a silicon substrate. Next, the solvent is allowed to evaporate, and then heated-treated using a temperature of between 150.degree. C. to 400.degree. C. to form a silica-coated dielectric layer. Finally, a fluoride implant treatment (FIT) is performed to create a dielectric layer having a better thermal stability, more stable dielectric constant and a lower leakage current.

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patent: 5607773 (1997-03-01), Ahlburn et al.
patent: 5693565 (1997-12-01), Camilletti et al.

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