Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Processing feature prior to imaging
Patent
1993-03-01
1994-05-10
Rosasco, Steve
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Processing feature prior to imaging
430311, 430322, G03C 500
Patent
active
053106261
ABSTRACT:
A method for forming a patterned layer of material begins by providing a substrate (12). A device layer (14) is formed overlying the substrate (12). A layer (16) is formed over the device layer (14). Layer (16) is further characterized as being an inorganic dielectric material, such as a plasma enhanced silicon nitride (PEN) material. A mask (18) is positioned adjacent the layer (16). Ultra-violet (UV) light (20) is selectively exposed to the layer (16) through the mask (18). Exposure from the UV light (20) forms exposed regions (16b) and unexposed regions (16a) of the layer (16). The UV light (20) alters an atomic bonding energy of hydrogen atoms within the exposed regions (16b) while not altering unexposed regions (16a). The layer (16) is exposed to an etchant which etches the exposed regions (16b) and unexposed regions (16a) at different rates. The etching forms a patterned layer from the layer ( 16) which may be used as a masking layer.
REFERENCES:
patent: 4737446 (1988-04-01), Cohen et al.
Fernandes Mark G.
Filipiak Stanley M.
Wetzel Jeffrey T.
Motorola Inc.
Rosasco Steve
Witek Keith E.
LandOfFree
Method for forming a patterned layer using dielectric materials does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a patterned layer using dielectric materials , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a patterned layer using dielectric materials will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2411892