Method for forming a pattern in a thin-film transistor having te

Details Method for forming a pattern in a thin-film transistor having te Method for forming a pattern in a thin-film transistor having te

1981-02-25

1983-10-25

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Simultaneous developing a resist image and etching a subtrate

430166, 430318, 430323, 430326, 430327, 430329, 430330, 430331, 430275, C23F 102, G03C 500, H01L 2100

Patent

active

044119810

ABSTRACT:
A method for Te pattern formation in the manufacture of a thin-film transistor having a semiconductor layer of Te. Developing and etching of the substrate having the Te layer and a resist layer overlaying the Te layer are simultaneously carried out by the use of a developing and etching solution after having been exposed to rays of UV-light.

REFERENCES:
patent: 3639185 (1972-02-01), Colom et al.
patent: 4008084 (1977-02-01), Ikeda et al.
patent: 4113494 (1978-09-01), Hallman
patent: 4142898 (1979-03-01), Izu
patent: 4271257 (1981-06-01), Wacks et al.
patent: 4292388 (1981-09-01), Ikeda et al.
patent: 4292392 (1981-09-01), Ikeda et al.
patent: 4292393 (1981-09-01), Wada et al.
patent: 4292395 (1981-09-01), Wada et al.
patent: 4379827 (1983-04-01), Hallman
In re Hallman, 210 USPQ 609, decided 7/16/1981, (Ser. No. 350,372, filed 4/12/73 and pending in PTO as of 1/15/1982).
Chemical Abstracts, vol. 79, #110318Y, 1973.
Chemical Abstracts, vol. 82, #37355p, 1975.

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