Method for forming a pattern film with a narrower width

Details Method for forming a pattern film with a narrower width Method for forming a pattern film with a narrower width

2011-01-11

2011-01-11

Kim, Paul D (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S603130, C029S603140, C029S603150, C029S603180, C216S062000, C216S065000, C216S066000, C360S121000, C360S122000, C360S317000, C451S005000, C451S041000

Reexamination Certificate

active

07866029

ABSTRACT:
A method for forming a pattern film with a narrower width than the resolution of an exposure machine and a resist used independently of etching is provided. The method comprises the steps of: forming a first frame layer having end surfaces facing each other across a space having a width W1; forming a second frame layer having end surfaces facing each other across a space having a width W2that is larger than the width W1, the space having the width W2being located right above the space having the width W1; forming a trench-forming film provided with a trench having a minimum width W3that is smaller than the width W1so as to fill at least a part of the spaces having the width W1and the width W2respectively; and forming a pattern film so as to fill at least a part of the trench.

REFERENCES:
patent: 7452795 (2008-11-01), Iba
patent: 10-241125 (1998-09-01), None
patent: 2002-324304 (2002-11-01), None
patent: 2003-263705 (2003-09-01), None

Affiliated with

Also associated with

Rating

Method for forming a pattern film with a narrower width does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a pattern film with a narrower width, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a pattern film with a narrower width will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2640869