Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-02
2011-08-02
Le, Thao (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S682000, C257SE23157
Reexamination Certificate
active
07989344
ABSTRACT:
Ni3Si2FUSI gates can be formed inter alia by further reaction of NiSi/Ni2Si gate stacks. Ni3Si2behaves similarly to NiSi in terms of work function values, and of modulation with dopants on SiO2, in contrast to Ni-rich silicides which have significantly higher work function values on HfSixOyand negligible work function shifts with dopants on SiO2. Formation of Ni3Si2can applied for applications targeting NiSi FUSI gates, thereby expanding the process window without changing the electrical properties of the FUSI gate.
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IMEC
Le Thao
McDonnell Boehnen & Hulbert & Berghoff LLP
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