Method for forming a multilevel interconnect structure of an int

Details Method for forming a multilevel interconnect structure of an int Method for forming a multilevel interconnect structure of an int

1996-06-05

1998-12-22

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438637, H01L 214763

Patent

active

058519130

ABSTRACT:
A multilevel interconnect structure is provided. The multilevel interconnect structure includes two, three or more levels of conductors formed according to at least two exemplary embodiments. According to one embodiment, the contact structure which links conductors on one level to an underlying level is formed by a single via etch step followed by a fill step separate from a fill step used in filling the via. In this embodiment, the via is filled with a conductive material which forms a plug separate from the material used in forming the interconnect. In another exemplary embodiment, the step used in filling the via can be the same as that used in forming the interconnect. In either instance, a via is formed through a first dielectric to underlying conductors. A second dielectric is patterned upon the first dielectric and serves to laterally bound the fill material used in producing the overlying interconnect. Regardless of the process sequence chosen, the interlevel dielectric structure is left substantially planar in readiness for subsequent interconnect levels dielectically deposited thereon.

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