Method for forming a multi-layered structure of a...

Details Method for forming a multi-layered structure of a... Method for forming a multi-layered structure of a...

2006-01-24

2006-01-24

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C118S725000

Reexamination Certificate

active

06989338

ABSTRACT:
Disclosed is a method for forming a multi-layered structure having at least two films on a semiconductor substrate. The substrate is disposed on a thermally conductible stage for supporting the substrate. After the distance between the stage and the substrate is adjusted to a first interval so that the substrate has a first temperature by heat transferred from the stage, a first thin film is formed on the substrate at the first temperature. The distance is then adjusted from the first interval to a second interval so that the substrate reaches a second temperature, and then a second thin film is formed on the first thin film at the second temperature, thereby forming the multi-layered structure on the substrate. The multi-layered structure can be employed for a gate insulation film or the dielectric film of a capacitor.

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English language abstract of Korean Publication No. 01108659.
English language abstract of Korean Publication No. 1020010108659.

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