Fishing – trapping – and vermin destroying
Patent
1992-03-03
1993-10-12
Maples, John S.
Fishing, trapping, and vermin destroying
437245, 148DIG147, H01L 21441
Patent
active
052525180
ABSTRACT:
A LPCVD method for depositing a film of TiN on a semiconductor structure includes reacting an organometallic titanium source gas such as TMAT and organic silane as a reactive gas. The deposited film is a mixed phase of TiN and TiSi.sub.2 and is characterized by a low contact resistance, good step coverage and good barrier properties. The reaction is preferably carried out in a cold wall CVD reactor at relatively low temperatures (i.e. 200.degree. C.) and at pressures of from about 0.05 to 30 Torr.
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K. Sugiyama, S. Pac, Y. Takahashi and S. Motojima, "Low Temperature Deposition of Metal Nitrides by Thermal Decomposition of Organometallic Compounds" 122, 1545 (1975).
R. M. Fix, R. G. Gordon and D. M. Hoffman, "Titanium Nitride Thin Films by APCVD Synthesis using Organometallic Precursors"; MRS Smp. Proc. 168, 357 (1990).
D. C. Bradley and I. M. Thomas, Journal of the Chemical Society, 1960, 3857.
Doan Trung T.
Sandhu Gurtej S.
Gratton Stephen A.
Maples John S.
Micro)n Technology, Inc.
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