Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-02-14
2006-02-14
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C438S758000
Reexamination Certificate
active
06998351
ABSTRACT:
Disclosed is a method for forming a micro pattern. After a dual photoresist film having different glass transition temperatures is coated, an exposure process and a wet development process are implemented to form a dual photoresist film pattern. A RFP is then implemented for the dual photoresist film pattern. Therefore, it is possible to prohibit warpage of the photoresist film pattern. Accordingly, the uniformity of the critical dimension and a pattern shape could be improved. A good uniformity of the critical dimension and a good pattern shape in the etch process could be thus implemented.
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Kim Choi Dong
Kim Jong Hoon
Ghyka Alexander
Hynix / Semiconductor Inc.
Mayer Brown Rowe & Maw LLP
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