Method for forming a metallization layer stack to reduce the...

Details Method for forming a metallization layer stack to reduce the... Method for forming a metallization layer stack to reduce the...

2007-10-09

2007-10-09

Le, Dung Anh (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S700000

Reexamination Certificate

active

11043200

ABSTRACT:
A method for making a simplified dielectric layer stack for the first metallization layer is provided in combination with an improved anisotropic etch process, wherein the etch attack at the trench perimeter is reduced for a patterning process on the basis of a 193 nm lithography. In the simplified layer stack, a bottom etch stop layer formed beneath a low-k dielectric layer may be omitted, thereby reducing production costs while enhancing product performance by lowering leakage currents in the first metallization layer.

REFERENCES:
patent: 6168726 (2001-01-01), Li et al.
patent: 6350700 (2002-02-01), Schinella et al.
patent: 6475925 (2002-11-01), Braeckelmann et al.
patent: 6514849 (2003-02-01), Hui et al.
patent: 6969685 (2005-11-01), Li et al.
patent: 2003/0235993 (2003-12-01), Leung et al.
patent: 2004/0161930 (2004-08-01), Ma et al.
patent: 2005/0130411 (2005-06-01), Bao et al.

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