Method for forming a metallization layer

Details Method for forming a metallization layer Method for forming a metallization layer

2007-10-02

2007-10-02

Le, Dung. A (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S692000, C438S508000, C438S508000

Reexamination Certificate

active

10820291

ABSTRACT:
A method for depositing metal on a semiconductor device having a substrate, an exposed first surface, and an exposed second surface is provided. Metal ions are deposited on the exposed first surface and on the exposed second layer by applying a first voltage between the substrate and an anode in the presence of an electrolytic bath, and metal ions are removed from the exposed first surface by applying a second voltage between the substrate and the anode in the presence of the electrolytic bath. Other aspects and embodiments are provided herein.

REFERENCES:
patent: 4624749 (1986-11-01), Black et al.
patent: 4884123 (1989-11-01), Dixit et al.
patent: 5017271 (1991-05-01), Whewell et al.
patent: 5032233 (1991-07-01), Yu et al.
patent: 5066611 (1991-11-01), Yu
patent: 5151168 (1992-09-01), Gilton et al.
patent: 5188723 (1993-02-01), Yu et al.
patent: 5222329 (1993-06-01), Yu
patent: 5243220 (1993-09-01), Shibata et al.
patent: 5256274 (1993-10-01), Poris
patent: 5277985 (1994-01-01), Li et al.
patent: 5310602 (1994-05-01), Li et al.
patent: 5317193 (1994-05-01), Watanabe
patent: 5336391 (1994-08-01), Rice
patent: 5344792 (1994-09-01), Sandhu et al.
patent: 5366929 (1994-11-01), Cleeves et al.
patent: 5378310 (1995-01-01), Satoh et al.
patent: 5380679 (1995-01-01), Kano
patent: 5381040 (1995-01-01), Sun et al.
patent: 5530418 (1996-06-01), Hsu et al.
patent: 5545926 (1996-08-01), Kohyama et al.
patent: 5662788 (1997-09-01), Sandhu et al.
patent: 5691571 (1997-11-01), Hirose et al.
patent: 5719446 (1998-02-01), Taguchi et al.
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5824599 (1998-10-01), Schacham-Diamond et al.
patent: 5851367 (1998-12-01), Nguyen et al.
patent: 6143593 (2000-11-01), Augusto
patent: 6144095 (2000-11-01), Sandhu et al.
patent: 6171952 (2001-01-01), Sandhu et al.
patent: 6290833 (2001-09-01), Chen
patent: 6369430 (2002-04-01), Adetutu et al.
patent: 6753254 (2004-06-01), Sandhu et al.
patent: 7126195 (2006-10-01), Sandhu et al.

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