Method for forming a metallization layer

Details Method for forming a metallization layer Method for forming a metallization layer

2006-10-24

2006-10-24

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S383000, C257S586000, C257S597000, C257S619000, C257S690000, C257S773000, C257S774000, C438S624000, C438S682000

Reexamination Certificate

active

07126195

ABSTRACT:
A method for forming a metallization layer (30). A first layer (14) is formed outwardly from a semiconductor substrate (10). Contact vias (16) are formed through the first layer (14) to the semiconductor substrate (10). A second layer (20) is formed outwardly from the first layer (14). Portions of the second layer (20) are selectively removed such that the remaining portion of the second layer (20) defines the layout of the metallization layer (30) and the contact vias (16). The first and second layers (14) and (20) are electroplated by applying a bi-polar modulated voltage having a positive duty cycle and a negative duty cycle to the layers in a solution containing metal ions. The voltage and surface potentials are selected such that the metal ions are deposited on the remaining portions of the second layer (20). Further, metal ions deposited on the first layer (14) during a positive duty cycle are removed from the first layer (14) during a negative duty cycle. Finally, exposed portions of the first layer (14) are selectively removed.

REFERENCES:
patent: 4884123 (1989-11-01), Dixit et al.
patent: 5017271 (1991-05-01), Whewell et al.
patent: 5032233 (1991-07-01), Yu et al.
patent: 5066611 (1991-11-01), Yu
patent: 5151168 (1992-09-01), Gilton et al.
patent: 5188723 (1993-02-01), Yu et al.
patent: 5222329 (1993-06-01), Yu
patent: 5243220 (1993-09-01), Shibata et al.
patent: 5256274 (1993-10-01), Poris
patent: 5277985 (1994-01-01), Li et al.
patent: 5310602 (1994-05-01), Li et al.
patent: 5317193 (1994-05-01), Watanabe
patent: 5336391 (1994-08-01), Rice
patent: 5344792 (1994-09-01), Sandhu et al.
patent: 5366929 (1994-11-01), Cleeves et al.
patent: 5378310 (1995-01-01), Satoh et al.
patent: 5380679 (1995-01-01), Kano
patent: 5381040 (1995-01-01), Sun et al.
patent: 5530418 (1996-06-01), Hsu et al.
patent: 5545926 (1996-08-01), Kohyama et al.
patent: 5662788 (1997-09-01), Sandhu et al.
patent: 5691571 (1997-11-01), Hirose et al.
patent: 5719446 (1998-02-01), Taguchi et al.
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5824599 (1998-10-01), Schacham-Diamand et al.
patent: 5851367 (1998-12-01), Nguyen et al.
patent: 6143593 (2000-11-01), Augusto
patent: 6144095 (2000-11-01), Sandhu et al.
patent: 6171952 (2001-01-01), Sandhu et al.
patent: 6369430 (2002-04-01), Adetutu et al.
patent: 6753254 (2004-06-01), Sandhu et al.
patent: 2004/0192003 (2004-09-01), Sandhu et al.

Affiliated with

Also associated with

Rating

Method for forming a metallization layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a metallization layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a metallization layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3701038