Method for forming a metallic barrier layer in semiconductor dev

Details Method for forming a metallic barrier layer in semiconductor dev Method for forming a metallic barrier layer in semiconductor dev

1995-07-07

1999-03-02

Niebling, John

Fishing, trapping, and vermin destroying

437192, 437165, 427528, H01L 21223, H01L 21383

Patent

active

058770313

ABSTRACT:
The present invention relates to a method for forming a TiNO metallic barrier layer acting as a diffusion barrier to intercept the diffusing of the Si atoms between metal layers, the method comprising the steps of: forming a TiN film through a sputtering equipment using Ar and N.sub.2 gas; implanting N.sub.2 O gas on the upper part of the TiN film; and annealing the resulting structure at N.sub.2 atmosphere for diffusing oxygen ions, thereby forming said resulting structure into uniform TiNO film.

REFERENCES:
patent: 4968886 (1990-11-01), Wan et al.
patent: 4987102 (1991-01-01), Nguyen et al.
patent: 5250467 (1993-10-01), Somekh et al.
patent: 5420070 (1995-05-01), Matsuura et al.
patent: 5449641 (1995-09-01), Maeda

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