Method for forming a metal plug

Details Method for forming a metal plug Method for forming a metal plug

1998-11-13

2000-11-21

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438631, 438644, 438648, 438654, 438656, 438672, 438683, H01L 214763

Patent

active

061502596

ABSTRACT:
A method for forming a metal plug is provided. The method is used to form a metal plug without a hole on a glue/barrier layer within a trench when the glue/barrier layer has been formed for a while. A substrate with a trench therein and a glue/barrier layer formed conformal to the profile of the substrate is provided. A post-treatment is performed on the glue/barrier layer to prevent moisture absorption and to make the glue/barrier become dense. The post-treatment comprises a plasma treatment or a deep UV plus laser treatment. After performing the post-treatment step, a metal layer is formed on the glue/barrier layer at least to fill in the trench. The metal layer other than that filling the trench is removed to form a metal plug.

REFERENCES:
patent: 5094977 (1992-03-01), Yu et al.
patent: 5834068 (1998-11-01), Chern et al.
patent: 5970378 (1999-10-01), Shue et al.

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