Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-05
2006-09-05
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S673000, C438S713000, C438S978000, C257SE21578
Reexamination Certificate
active
07101786
ABSTRACT:
Provided is a method for forming a metal line in a semiconductor device. The method forms round portions at top edges of an insulation film by means of a polymer and then etches the rest portion (i.e., sidewall parts) in an almost vertical direction, which makes it possible to shrink down a width of a patterned insulation film at maximum nevertheless of a dimension of a metal-line patterning mask. By way the method, an interval between adjacent metal lines is extended at maximum, preventing mutual interference between the metal lines.
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Estrada Michelle
Hynix / Semiconductor Inc.
Mayer, Brown, Rowe and Maw LLP
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