Method for forming a metal line in a semiconductor device

Details Method for forming a metal line in a semiconductor device Method for forming a metal line in a semiconductor device

2006-09-05

2006-09-05

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S673000, C438S713000, C438S978000, C257SE21578

Reexamination Certificate

active

07101786

ABSTRACT:
Provided is a method for forming a metal line in a semiconductor device. The method forms round portions at top edges of an insulation film by means of a polymer and then etches the rest portion (i.e., sidewall parts) in an almost vertical direction, which makes it possible to shrink down a width of a patterned insulation film at maximum nevertheless of a dimension of a metal-line patterning mask. By way the method, an interval between adjacent metal lines is extended at maximum, preventing mutual interference between the metal lines.

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patent: 1020020002922 (2002-01-01), None
patent: 1020040059733 (2004-07-01), None

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