Method for forming a metal interconnection layer of a...

Details Method for forming a metal interconnection layer of a... Method for forming a metal interconnection layer of a...

2006-05-09

2006-05-09

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S633000, C438S634000, C438S638000, C438S672000

Reexamination Certificate

active

07041592

ABSTRACT:
A method for forming a metal interconnection layer of a semiconductor device comprises forming a film including a material selective to a medium used in an ashing process on an interlayer insulating film. The method comprises transforming the film during the ashing process to form an interconnection pattern having a dual damascene structure. A dielectric material such as copper is deposited on the interconnection pattern, which is planarized through CMP, thereby forming a via contact having a single damascene structure without a recess therein.

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