Method for forming a low-k dielectric structure on a substrate

Details Method for forming a low-k dielectric structure on a substrate Method for forming a low-k dielectric structure on a substrate

2005-11-22

2005-11-22

Wilson, Christian (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S631000, C438S633000, C438S637000

Reexamination Certificate

active

06967158

ABSTRACT:
The present invention provides a method for forming a low-k dielectric structure on a substrate10that includes depositing, upon the substrate, a dielectric layer12.A multi-film cap layer18is deposited upon the dielectric layer. The multi-film cap layer includes first181and second182films, with the second film being disposed between the dielectric layer and the first film. The first film typically has a removal rate associated therewith that is less than the removal rate associated with the second film. A deposition layer20is deposited upon the multi-film cap layer and subsequently removed. The properties of the multi-film cap layer are selected so as to prevent the dielectric layer from being exposed/removed during removal of the deposition film. In this manner, a deposition layer, having variable rates of removal, such as copper, may be planarized without damaging the underlying dielectric layer.

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Wolf, Silicon Processing for the VLSI Era, vol. 1 Process Technology, (Lattice Press, California, 1986), p. 192.

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