Method for forming a laser alterable fuse area of a memory cell

Details Method for forming a laser alterable fuse area of a memory cell Method for forming a laser alterable fuse area of a memory cell

1996-06-06

1998-10-13

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438600, 438129, 438130, 438131, 438132, H01L 21268

Patent

active

058211608

ABSTRACT:
A method for manufacturing an static random access memory (SRAM) cell (10) begins by manufacturing a fuse region (36) over a substrate (10). An etch stop layer (44) is formed overlying the fuse region (36) from resistor polysilicon material. In order for the fuse region (36) to be accessed and properly disabled, an opening (60) must be provided which stops on the etch stop layer (44). The etch stop (44) ensures a consistent and repeatable optimal thickness X of dielectric material above the fuse region (36) to provide for proper laser access and repair. The etch stop layer (44) therefore reduces wafer to wafer and die to die variation in thickness X and provides for a higher yield laser repair for each SRAM integrated circuit and every wafer processed using this methodology.

REFERENCES:
patent: 4628590 (1986-12-01), Udo et al.
patent: 5096850 (1992-03-01), Lippitt, III
patent: 5235205 (1993-08-01), Lippitt, III
Sorab K. Ghandhi, VLSI Fabrication Principles, John Wiley and Sons (no month given), 1994.

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