Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-23
2011-08-23
Hu, Shouxiang (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S151000, C438S585000, C438S665000, C257SE21174, C257SE21159
Reexamination Certificate
active
08003533
ABSTRACT:
A disclosed laminated structure includes a wettability-variable layer containing a wettability-variable material whose surface energy changes when energy is applied thereto and including at least a high-surface-energy area having high surface energy and a low-surface-energy area having low surface energy; and a conductive layer formed on the high-surface-energy area. The high-surface-energy area includes a first area and a second area extending from the first area and having a width smaller than that of the first area.
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Onodera Atsushi
Suzuki Koei
Tano Takanori
Tomono Hidenori
Yamaga Takumi
Hu Shouxiang
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Ricoh & Company, Ltd.
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