Method for forming a hole filling plug for a semiconductor devic

Details Method for forming a hole filling plug for a semiconductor devic Method for forming a hole filling plug for a semiconductor devic

1995-12-20

1999-04-13

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438628, 438637, 438648, H01L 2128, H01L 2131

Patent

active

058937498

ABSTRACT:
In a method for forming a tungsten plug interconnecting an upper level wiring conductor and a lower level wiring conductor insulated from each other by an interlayer insulator film, an adhesion layer is formed on the interlayer insulator film formed on the lower level wiring conductor. A photoresist layer is deposited on the adhesion layer, and an opening is formed in the photoresist layer. The adhesion layer is selectively removed by an isotropic etching using, as a mask, the photoresist layer having the opening formed therein, so that an opening retracted outwardly from the edge of the opening formed in the photoresist layer is formed in the adhesion layer. A hole is formed through the interlayer insulator film so that the lower level wiring conductor is exposed at a bottom of the hole, and a tungsten layer is formed in the hole of the interlayer insulator film so as to form a tungsten filling for the hole of the interlayer insulator film.

REFERENCES:
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 4960732 (1990-10-01), Dixit et al.
patent: 5167760 (1992-12-01), Mu et al.
patent: 5225372 (1993-07-01), Savkar et al.
patent: 5306952 (1994-04-01), Matsuura et al.
patent: 5374591 (1994-12-01), Hasegawa et al.
J. Van Laarhoven et al., "A Novel Blanket Tungsten Etchback Scheme", IEEE, Jun. 12-13, 1989, pp. 129-135, VMIC Conf.

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