Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Reexamination Certificate
2007-02-06
2007-02-06
Chen, Bret (Department: 1762)
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
C427S255394, C427S533000, C427S535000
Reexamination Certificate
active
10327467
ABSTRACT:
A method of forming a silicon nitride film is described. According to the present invention, a silicon nitride film is deposited by thermally decomposing a silicon
itrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550° C.) to form a silicon nitride film. The thermally deposited silicon nitride film is then treated with hydrogen radicals to form a treated silicon nitride film.
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Chen Aihua
Sanchez Errol Antonio C.
Wang Shulin
Applied Materials Inc.
Chen Bret
Patterson & Sheridan LLP
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