Method for forming a High dielectric constant insulator in the f

Details Method for forming a High dielectric constant insulator in the f Method for forming a High dielectric constant insulator in the f

1996-12-20

1999-04-06

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438659, 438775, 438791, 438694, 438703, H01L 21265

Patent

active

058917985

ABSTRACT:
A method for forming an insulator with a high dielectric constant on silicon is disclosed. This method overcomes one limitation of increasing the dielectric constant of a gate dielectric by using a high dielectric constant material, such as a paraelectric material, instead of silicon dioxide. First, nitrogen is implanted into the silicon through a sacrificial oxide layer. After annealing the substrate and stripping the sacrificial oxide, a dielectric layer is formed from a material with a high dielectric constant, such as a paraelectric material. Although the paraelectric material provides a source of oxygen for oxidation of silicon in subsequent high temperature process steps, no oxidation takes place due to the presence of the nitrogen in the silicon. Therefore, there is no undesired decrease in the overall capacitance of the dielectric system. When a gate electrode is formed on the dielectric layer, a nitrogen implant into the gate electrode can be used to prevent oxidation at the upper interface of the gate dielectric.

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