Method for forming a high-density circuit structure with interla

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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216 18, 427 98, 430314, 430315, G03F 700

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058916067

ABSTRACT:
A process for forming a double-sided or multi-layered circuit structure entailing the use of a fill material that forms a conductive connection between the layers of the circuit structure and photodefinable resins that form permanent dielectric layers and plateable surfaces of the circuit structure. The method includes forming a through-hole in a substrate, and then filling the through-hole with the fill material containing a metal that is catalytic to electroless copper. The fill material forms an electrical connection having oppositely-disposed connection surfaces that are coextensive with opposite surfaces of the substrate. A first photodefinable dielectric layer is then formed on each surface of the substrate, including the connection surfaces, and openings are photoimaged and developed in the dielectric layers to expose a portion of each connection surface. A second dielectric layer is then formed over each of the first dielectric layers and the exposed portions of the connection surfaces, with an opening being formed in each of the second dielectric layers to re-expose the portions of the connection surfaces and contiguous surface portions of the first dielectric layers. The exposed surface portions of the first dielectric layers and the exposed portions of the connection surfaces are then electrolessly plated with copper to form conductor traces on each side of the substrate. As a result, the traces electrically contact the connection surfaces, such that traces on opposite sides of the circuit structure are interconnected with the connection formed by the fill material in the through-hole.

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