Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-03-23
2010-02-23
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C257S613000, C257SE21090, C257SE33023, C257SE33025, C257SE21094, C257S798000
Reexamination Certificate
active
07666765
ABSTRACT:
Semiconductor process technology and devices are provided, including a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate, wherein the substrate is exposed to at least 0.01 μmol/cm2of one or more organometallic compounds containing Al, in a flow of less than 5 μmol/min. The preferred embodiments are equally related to the semiconductor structure obtained by the method, and to a device comprising said structure.
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Cheng Kai
Degroote Stefan
Leys Maarten
Everhart Caridad M
IMEC
Katholieke Universiteit Leuven (KUL)
Knobbe Martens Olson & Bear LLP
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