Method for forming a group III nitride material on a silicon...

Details Method for forming a group III nitride material on a silicon... Method for forming a group III nitride material on a silicon...

2011-08-02

2011-08-02

Valentine, Jami M (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

C438S483000, C257SE21090, C257S798000, C257SE29089, C257SE29068, C257S077000, C257S615000

Reexamination Certificate

active

07989925

ABSTRACT:
Semiconductor process technology and devices are provided, including a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate, wherein the substrate is exposed to at least 0.01 μmol/cm2of one or more organometallic compounds containing Al, in a flow of less than 5 μmol/min. The preferred embodiments are equally related to the semiconductor structure obtained by the method, and to a device comprising said structure.

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