Method for forming a gate in a semiconductor, which prevents...

Details Method for forming a gate in a semiconductor, which prevents... Method for forming a gate in a semiconductor, which prevents...

2007-10-23

2007-10-23

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S486000, C438S592000, C438S655000, C438S664000

Reexamination Certificate

active

11156287

ABSTRACT:
A method for forming a gate in a semiconductor device includes the steps of: providing a substrate having active and field regions; selectively etching a portion of the active region to form a trench; forming on the substrate including the trench an amorphous conductive film for forming a gate; subjecting the resulting structure to an annealing process so as to convert the amorphous conductive film into a crystalline conductive film; and selectively etching the crystalline conductive film so as to form a gate covering the corner portion of the trench.

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Wolf et al., Stanley, “Crystalline Defects, Thermal Processing, and Gettering,” Silicon Processing for the VLSI Era—vol. 1: Process Technolgy, Lattice Press (1986), pp. 56-58.

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