Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-04-18
2006-04-18
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S677000, C438S674000
Reexamination Certificate
active
07030001
ABSTRACT:
One embodiment forms a gate dielectric layer over a substrate and then selectively deposits a first metal layer over portions of the gate dielectric layer in which a first device type will be formed. A second metal layer, different from the first metal layer, is formed over exposed portions of the gate dielectric layer in which a second device type will be formed. Each of the first and second device types will have different work functions because each will include a different metal in direct contact with the gate dielectric. In one embodiment, the selective deposition of the first metal layer is performed by ALD and with the use of an inhibitor layer which is selectively formed over the gate dielectric layer such that the first metal layer may be selectively deposited on only those portions of the gate dielectric layer which are not covered by the inhibitor layer.
REFERENCES:
patent: 5358743 (1994-10-01), Hampden-Smith et al.
patent: 5725788 (1998-03-01), Maracas et al.
patent: 5869135 (1999-02-01), Vaeth et al.
patent: 5937758 (1999-08-01), Maracas et al.
patent: 5959337 (1999-09-01), Gardner et al.
patent: 6228723 (2001-05-01), Kim
patent: 6605534 (2003-08-01), Chung et al.
patent: 6649211 (2003-11-01), Lyons et al.
patent: 6686282 (2004-02-01), Simpson et al.
patent: 2003/0148618 (2003-08-01), Parikh
patent: 2003/0162316 (2003-08-01), Zangmeister et al.
patent: 2003/0181035 (2003-09-01), Yoon et al.
patent: 2004/0121614 (2004-06-01), Baek et al.
patent: 2004/0140513 (2004-07-01), Forbes et al.
patent: 2004/0198009 (2004-10-01), Chen et al.
patent: 2004/0213971 (2004-10-01), Colburn et al.
patent: 2005/0045923 (2005-03-01), Chambers
patent: 2005/0048722 (2005-03-01), Saito et al.
patent: 63-299280 (1988-12-01), None
Adetutu Olubunmi O.
Jones Jr. Robert E.
Michaelson Lynne M.
Yu Kathleen C.
Chiu Joanna G.
Dolezal David G.
Everhart Caridad
Freescale Semiconductor Inc.
LandOfFree
Method for forming a gate electrode having a metal does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a gate electrode having a metal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a gate electrode having a metal will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3579085